Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

Graphene Hot-electron Transistors

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Raman spectroscopy is a fast and nondestructive means to characterize graphene samples. In particular, the Raman spectra are strongly affected by doping. While the resulting change in position and width of the G peak can be explained by the nonadiabatic Kohn anomaly at , the significant doping dependence of the 2D peak intensity has not been understood yet. Here we show that this is due to a co...

Stability of the Bi2Se3(111) topological state: Electron-phonon and electron-defect scattering

Richard C. Hatch,1 Marco Bianchi,1 Dandan Guan,1,2 Shining Bao,2 Jianli Mi,3 Bo Brummerstedt Iversen,3 Louis Nilsson,1 Liv Hornekær,1 and Philip Hofmann1 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, DK-8000 Aarhus C, Denmark 2Department of Physics, Zhejiang University, Hangzhou, 310027, China 3Department of Chemistry, Center for Materials Crysta...

Observation of distinct electron-phonon couplings in gated bilayer graphene.

A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and antisymmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry ...

Electron-phonon and electron-electron interactions in organic field effect transistors

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a metallic-like to an insulating behavior upon increasing the dielectric constant of the gate material. This phenomenon can be explained in terms of the formati...